Design and simulation of homojunction perovskite CH3NH3GeI3 solar cells

In this paper, device simulation of planar p-n homojunction design MAGeI(3) solar cell with influence of bulk defects of n-type MAGeI(3) and p-type MAGeI(3) on device performance was studied and analyzed utilizing numerical software. The availability of the induced electric field between the n-type perovskite and p-type perovskite actively facilitates the transportation direction of the photon-generated carriers and minimizes the carrier recombination. The simulation results revealed that the device performance is considerably enhanced by the use of the proposed p-n homojunction MAGeI(3) solar cell in comparison of undoped MAGeI(3) solar cell. Moreover, the defect densities of n-type MAGeI(3) and p-type MAGeI(3) have a great impact on the performance of the proposed p-n homojunction MAGeI(3) solar cell. Accordingly, the value of 19.16% of conversion efficiency was achieved with 10(13) cm(-3) of bulk defect densities in n-type MAGeI(3) layer and p-type MAGeI(3) layer. Our work indicated that the proposed p-n homojunction MAGeI(3) design could be served as an efficient strategy to improve the MAGeI(3)-based solar cells.