共 50 条
- [1] Self-rectifying resistive memory in passive crossbar arraysNature Communications, 12Kanghyeok Jeon论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsJeeson Kim论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsJin Joo Ryu论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsSeung-Jong Yoo论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsChoongseok Song论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsMin Kyu Yang论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsDoo Seok Jeong论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced MaterialsGun Hwan Kim论文数: 0 引用数: 0 h-index: 0机构: Korea Research Institute of Chemical Technology (KRICT) 141 Gajeong-Ro,Division of Advanced Materials
- [2] Sodium-Doped Titania Self-Rectifying Memristors for Crossbar Array Neuromorphic ArchitecturesADVANCED MATERIALS, 2022, 34 (06)Kim, Sung-Eun论文数: 0 引用数: 0 h-index: 0机构: Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South Korea Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South KoreaLee, Jin-Gyu论文数: 0 引用数: 0 h-index: 0机构: Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South Korea Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South KoreaLing, Leo论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South KoreaLiu, Stephanie E.论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South Korea论文数: 引用数: h-index:机构:Sangwan, Vinod K.论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South KoreaHersam, Mark C.论文数: 0 引用数: 0 h-index: 0机构: Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA Northwestern Univ, Dept Chem, Evanston, IL 60208 USA Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South KoreaLee, Hong-Sub论文数: 0 引用数: 0 h-index: 0机构: Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South Korea Kangwon Natl Univ, Dept Mat Sci & Engn, 1 Kangwondaehak Gil, Chunchon 24341, Gangwon, South Korea
- [3] Dot-Product Operation in Crossbar Array Using a Self-Rectifying Resistive DeviceADVANCED MATERIALS INTERFACES, 2022, 9 (20):Jeon, Kanghyeok论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea Hanyang Univ, Div Mat Sci & Engn, Wansimni Ro 222, Seoul 04763, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South KoreaRyu, Jin Joo论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea论文数: 引用数: h-index:机构:Kim, Gun Hwan论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon 34114, South Korea
- [4] Self-rectifying resistive memory in passive crossbar arraysNATURE COMMUNICATIONS, 2021, 12 (01)Jeon, Kanghyeok论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South KoreaKim, Jeeson论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Div Mat Sci & Engn, Seoul, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South KoreaRyu, Jin Joo论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South KoreaYoo, Seung-Jong论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South KoreaSong, Choongseok论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Div Mat Sci & Engn, Seoul, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South KoreaYang, Min Kyu论文数: 0 引用数: 0 h-index: 0机构: Sahmyook Univ, Intelligent Elect Device Lab, Seoul, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea论文数: 引用数: h-index:机构:Kim, Gun Hwan论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, 141 Gajeong Ro, Daejeon, South Korea
- [5] Vertical Memristive Crossbar Array for Multilayer Graph Embedding and AnalysisADVANCED MATERIALS, 2025,Han, Janguk论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaJang, Yoon Ho论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaMoon, Ji Won论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaShim, Sung Keun论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaCheong, Sunwoo论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaLee, Soo Hyung论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaPark, Tae Won论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaHan, Joon-Kyu论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Syst Semicond Engn, 35 Baekbeom Ro, Seoul 04107, South Korea Sogang Univ, Dept Elect Engn, 35 Baekbeom Ro, Seoul 04107, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Interuniv Semicond Res Ctr, Seoul 08826, South Korea Seoul Natl Univ, Coll Engn, Dept Mat Sci & Engn, Seoul 08826, South Korea
- [6] TiOx-based self-rectifying memory device for crossbar WORM memory array applicationsCHINESE PHYSICS B, 2021, 30 (01)Fu, Li-Ping论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R ChinaSong, Xiao-Qiang论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R ChinaGao, Xiao-Ping论文数: 0 引用数: 0 h-index: 0机构: Key Lab Sensor & Sensing Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R ChinaWu, Ze-Wei论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R ChinaChen, Si-Kai论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R ChinaLi, Ying-Tao论文数: 0 引用数: 0 h-index: 0机构: Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R China Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China Lanzhou Univ, Key Lab Special Funct Mat & Struct Design, Minist Educ, Lanzhou 730000, Peoples R China
- [7] TiOx-based self-rectifying memory device for crossbar WORM memory array applicationsChinese Physics B, 2021, 30 (01) : 424 - 427论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:高晓平论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Sensor and Sensing Technology Gansu Province Key Laboratory of Special Function Materials and Structure Design Ministry of Education Lanzhou University论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [8] Purely self-rectifying memristor-based passive crossbar array for artificial neural network acceleratorsNature Communications, 15Kanghyeok Jeon论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringJin Joo Ryu论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringSeongil Im论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringHyun Kyu Seo论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringTaeyong Eom论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringHyunsu Ju论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringMin Kyu Yang论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringDoo Seok Jeong论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and EngineeringGun Hwan Kim论文数: 0 引用数: 0 h-index: 0机构: Hanyang University,Division of Materials Science and Engineering
- [9] Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic ComputingNANO LETTERS, 2024, 24 (05) : 1667 - 1672Lu, Chen论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R ChinaMeng, Jialin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China论文数: 引用数: h-index:机构:Wang, Tianyu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R ChinaZhu, Hao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R ChinaSun, Qing-Qing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R ChinaChen, Lin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China Zhangjiang Fudan Int Innovat Ctr, Shanghai 201203, Peoples R China Fudan Univ, Sch Microelect, State Key Lab Integrated Chips & Syst, Shanghai 200433, Peoples R China
- [10] Purely self-rectifying memristor-based passive crossbar array for artificial neural network acceleratorsNATURE COMMUNICATIONS, 2024, 15 (01)Jeon, Kanghyeok论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaRyu, Jin Joo论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaIm, Seongil论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol KIST, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaSeo, Hyun Kyu论文数: 0 引用数: 0 h-index: 0机构: Sahmyook Univ, Intelligent Elect Device Lab, 815 Hwarang Ro, Seoul 01795, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaEom, Taeyong论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Chem Technol KRICT, Div Adv Mat, Daejeon 34114, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaJu, Hyunsu论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol KIST, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South KoreaYang, Min Kyu论文数: 0 引用数: 0 h-index: 0机构: Sahmyook Univ, Intelligent Elect Device Lab, 815 Hwarang Ro, Seoul 01795, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea论文数: 引用数: h-index:机构:Kim, Gun Hwan论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea Yonsei Univ, Dept Syst Semicond Engn, Seoul 03722, South Korea Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea