Phase Engineering of Molybdenum Dichalcogenide to Anion-Tunable Polyphasic Quaternary Chalcogenide (2H/1T/1T') MoSxSeyTez (x plus y plus z=2) Amplifies the Growth of H2 Electrolytically

被引:1
|
作者
Sarkar, Abhimanyu [1 ]
Sanyal, Gopal [2 ]
Chakraborty, Brahmananda [3 ,4 ]
Show, Bibhutibhushan [1 ]
机构
[1] Jadavpur Univ, Dept Chem, Kolkata 700032, India
[2] Bhabha Atom Res Ctr, Mech Met Div, Mumbai 400085, India
[3] Bhabha Atom Res Ctr, High Pressure & Synchroton Radiat Phys Div, Mumbai 400085, India
[4] Homi Bhabha Natl Inst, Mumbai 400094, India
关键词
multiple phase; anion tuning; quaternary molybdenum chalcogenides; hydrogen evolution reaction; polytypic (2H/1T/1T'); phase consolidation; HYDROGEN EVOLUTION REACTION; CATALYTIC-ACTIVITY; MONOLAYER MOS2; EFFICIENT; ELECTROCATALYSTS; TRANSITION; NANOSHEETS; GRAPHENE; MOTE2;
D O I
10.1021/acsaem.3c01080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Herein, we report first anion-tunable quaternary molybdenum chalcogenides (QMC, MoSx Se-y Te-z , x + y + z = 2) with multiple phases [2H (29.7%), 1T (33.54%), 1T' (36.76%)] for comparative hydrogen evolution reaction (HER) studies with molybdenum dichalcogenides (MDC) and ternary molybdenum chalcogenides (TMC). The multiple-phase inclusion with the help of incorporation of different chalcogen atoms in single catalysts is a significant aspect for producing green H-2 efficiently. QMC presents a superior response than MDC and TMC in acidic and PBS media due to binary to ternary phase transition. The optimal MoS0.5Se1Te0.5 delivers admirable electrocatalytic activity (overpotential of 111 mV at 2 mA cm(-2), Tafel slope of 62 mV dec(-1), 96% Faradaic efficiency, 45 mu mol h(-1)) in 0.5 M H2SO4 with superb stability. Employing density functional theory over MoS0.5Se1Te0.5, the computed overpotential matches nicely with the experimental data, showing the Delta G value of similar to 0.098 eV. The polytypic (2H/1T/1T') phase consolidation modifies the electronic structure of Mo's d band and directly affects the growth of HER.
引用
收藏
页码:8017 / 8031
页数:15
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