Growth and Electronic Properties of SnSe2 Films on Reconstructed, (111)-Oriented SrTiO3 Substrates

Heterointerfaces and heterostructures offer unprecedentedpotentialfor tailoring the physical behaviors of two-dimensional materials.In this work, we investigate the growth and electronic propertiesof SnSe2 films on the 3 x 3 reconstructed (111)-orientedSrTiO(3) surface using scanning tunneling microscopy/spectroscopy.A distinct coverage-dependent growth mode is identified, which isunambiguously correlated with the spatial distribution of the electronicproperties of SnSe2 films. We further demonstrate thatthe interfacial modification using a van der Waals-layered materialof low work function (1T & PRIME;-WSe2) between SnSe2 films and the substrate effectively alters the growth andthe electronic structures of SnSe2. Our results provideuseful insights into the interfacial phenomena that crucially influencethe growth and functionalities of SnSe2 films.