The influence of the flexoelectric effect on materials properties with the emphasis on photovoltaic and related applications: A review

被引:22
|
作者
Surmenev, Roman A. [1 ]
Surmeneva, Maria A.
机构
[1] Natl Res Tomsk Polytech Univ, Phys Mat Sci & Composite Mat Ctr, Res Sch Chem & Appl Biomed Sci, Tomsk 634050, Russia
基金
俄罗斯科学基金会;
关键词
Flexoelectric effect; Strain gradient; Strain engineering; Photovoltaic effect; Shockley-Queisser limit; Photodetector; FERROELECTRIC BATIO3 MATERIALS; SHOCKLEY-QUEISSER LIMIT; STRAIN GRADIENT; TOPOLOGY OPTIMIZATION; POLARIZATION; PHOTOCURRENT; ENHANCEMENT; ENERGY; PERFORMANCE; VOLTAGE;
D O I
10.1016/j.mattod.2023.05.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The research community is in permanent search of novel materials and exploitation of already elaborated phenomena to reveal yet unknown materials characteristics. Flexoelectricity has been in the spotlight lately because of its unique capacity to modulate electrical, optoelectronic, photovoltaic, and related properties and other characteristics of materials and devices. Nonetheless, potential limits on further progress of materials performance owing to incomplete knowledge about this effect are still not investigated to a sufficient extent. This review is focused on the most recent achievements on flexoelectric materials and on strain engineering strategies for modulating a strain gradient and flexoelectric response, with an emphasis on photovoltaic and related applications. Photodetectors based on flexoelectric materials and structures are discussed, and a brief overview of alternative (nonphotovoltaic) and emerging applications and challenges is provided. It is suggested that the most important materials for photovoltaic and related applications range from low-dimensional and thinfilm ferroelectric semiconductors (which for example can be designed in an alternative way, according to the "barrier layer capacitor" principle) to conducting materials that are not restricted by the Shockley-Queisser limit. Such materials enable ultrafast charge carrier separation and enhanced photocurrents, photovoltages, and other photoelectric parameters of devices under strain gradients, compared with available analogs.
引用
收藏
页码:256 / 298
页数:43
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