On-wafer characterisation of resonant-tunnelling diodes up to 1.1 THz

被引：0
|
作者：
Blomberg, Patrik [1 ]
Vukusic, Josip [1 ]
Drakinskiy, Vladimir [1 ]
Stake, Jan [1 ]
机构：
[1] Chalmers Univ Technol, Terahertz & Millimetre Wave Lab, MC2, Gothenburg, Sweden
来源：
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ | 2023年
关键词：
PROSPECTS;
D O I：
10.1109/IRMMW-THz57677.2023.10299370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents on-wafer S-parameter characterisation of resonant-tunnelling diodes between 0.5 THz and 1.1 THz. Diodes with a peak current density of 532 kA/cm(2) and a clear negative differential region have been fabricated. An on-chip Multi-Thru-Reflect-Line calibration kit was developed and utilised to achieve accurate S-parameter measurements up to 1.1 THz.
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页数：2
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