A 9.97-GHz 190.6-dBc/Hz FOM CMOS VCO Featuring Nested Common-Mode Resonator and Intrinsic Differential 2nd-Harmonic Output

被引:0
|
作者
Huang, Yunbo [1 ]
Chen, Yong [1 ]
Yang, Chaowei [1 ]
Mak, Pui-In [1 ]
Martins, Rui P. [1 ]
机构
[1] Univ Macau, State Key Lab Analog & Mixed Signal VLSI & IME EC, Taipa, Macao, Peoples R China
关键词
CMOS; voltage-controlled oscillator (VCO); phase noise (PN); common-mode (CM) resonance; flicker (1/f) noise; thermal noise; noise transfer; impulse sensitivity function (ISF); 1/f3 PN corner; Figure; of-Merit (FOM); tuning range (TR); quality factor; OSCILLATOR;
D O I
10.1109/ISCAS46773.2023.10182212
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper presents an 8-to-10GHz CMOS voltagecontrolled oscillator ( VCO) with common-mode (CM) resonance. It features a nested 8-shape inductor-based CM resonator with intrinsic differential 2nd harmonic extraction. The mutual coupling of the main tank and CM resonator is negligible due to the reversal magnetic field, which avoids the additional chip area occupation of the explicit CM inductor. The VCO prototyped in 65-nm CMOS scores a -136.7-dBc/Hz PN with 10-MHz offset at 9.97 GHz, consuming 4 mW of power with a standard supply voltage of 1-V. The achieved peak Figure-of-Merit (FOM) is 190.6 dBc/Hz at 10MHz offsets. Over a 22.9% tuning range, the VCO upholds a consistent FOM of >188.5 dBc at a 10-MHz offset. The core area is 0.116 mm(2).
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页数:5
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