Optical properties of semiconductor nanoparticles doped with 3d and 4f block elements

被引:4
|
作者
Bhar, Madhumita [1 ]
Bhunia, Nayan [1 ]
Debnath, Gouranga H. [2 ]
Waldeck, David H. [3 ]
Mukherjee, Prasun [1 ]
机构
[1] Univ Calcutta, Ctr Res Nanosci & Nanotechnol, Kolkata 700106, West Bengal, India
[2] Jain Univ, Ctr Nano & Mat Sci, Bangalore 562112, Karnataka, India
[3] Univ Pittsburgh, Dept Chem, Pittsburgh, PA 15260 USA
来源
CHEMICAL PHYSICS REVIEWS | 2024年 / 5卷 / 01期
基金
美国国家科学基金会;
关键词
ZINC-SULFIDE NANOPARTICLES; TITANIUM-DIOXIDE NANOPARTICLES; CATION-EXCHANGE; ENERGY-TRANSFER; PHOTOPHYSICAL PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; DOPANT PHOTOLUMINESCENCE; SENSITIZED LUMINESCENCE; QUANTUM DOTS; LANTHANIDE;
D O I
10.1063/5.0172408
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Doped inorganic nanoparticles (NPs) have enabled researchers across multiple disciplines to create new materials with unique optical, electronic, magnetic, electrical, chemical, and/or compositional properties. In the quest for generating newer functional materials with controlled optical and electronic properties, the use of d- and f-block elements as dopants in the inorganic NPs remain at the forefront of research. This article summarizes experiments that identify the important control parameters, in the form of NP core and surface properties, for promoting host-sensitized dopant emission from d- and f-doped inorganic/semiconductor NPs. We conclude that energy offsets between the dopant and NP electronic levels and an understanding of the charge trapping mechanisms can be used to predict dopant luminescence, and we claim that these features can be used to choose NP host materials by design, rather than by trial and error.
引用
收藏
页数:24
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