Regulating charge carrier extraction and transport with dual-interface modification for efficient perovskite solar cells

被引:8
|
作者
Ye, Weitao [1 ,2 ]
Du, Zhentao [1 ]
Ou, Deliu [1 ,2 ]
Tu, Jielei [3 ]
Shang, Ming-Hui [2 ]
Zhou, Jiahui [2 ]
Wang, Lin [2 ]
Yang, Weiyou [2 ]
Yang, Zuobao [2 ,3 ]
机构
[1] Guangxi Univ, Sch Resources Environm & Mat, State Key Lab Featured Met Mat & Life Cycle Safety, Nanning 530004, Peoples R China
[2] Ningbo Univ Technol, Inst Micro Nano Mat & Devices, Ningbo 315211, Peoples R China
[3] Yunnan Normal Univ, Yunnan Prov Rural Energy Engn Key Lab, Kunming 650500, Peoples R China
关键词
PERFORMANCE; PASSIVATION; GUANIDINIUM; LAYER; SNO2;
D O I
10.1039/d3tc01289a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Planar-structured metal halide perovskite solar cells (PSCs) have received considerable attention thanks to their superior optoelectronic properties with a record power conversion efficiency (PCE) of over 25%. However, further improvements in the PCE of these devices are still limited fundamentally by excessive charge carrier recombination, due to the prevailing defects in perovskites and their adjacent interfaces to the charge transport layer (CTL). Herein, we report an efficient dual-interface modification strategy to improve the charge carrier management in both perovskites and perovskite/CTL interfaces by post-treatment of perovskite surfaces with GABr and introducing NH4F-treated SnO2 as an electron transport layer, respectively. Accordingly, suppressed structural defects, improved crystallinity of the perovskite, and reduced interfacial defects have been achieved simultaneously, thus facilitating the carrier transport and extraction. As a result, the target PSCs attain a decent PCE of 19.61% with a remarkably enhanced fill factor of 78.34%. Moreover, the underlying mechanism concerning these improvements has been proposed. The present findings might provide some meaningful insights into exploring high-performance PSCs toward theoretically limited efficiency.
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收藏
页码:8553 / 8563
页数:11
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