Crystal growth and thermoelectric properties of Sn-doped Bi2Se3

被引：2

作者：

Ren, Rongrong ^{[1
,2
]}

Qin, Pengbin ^{[1
,2
]}

Song, Jiexi ^{[1
,2
]}

Qin, Yanqing ^{[1
,2
]}

Li, Wenqiang ^{[1
,2
]}

Wang, Yaocen ^{[1
,2
]}

Yang, Xiaoguang ^{[3
,4
]}

Li, Jilin ^{[5
]}

Loeser, Wolfgang ^{[6
]}

Cao, Chongde ^{[1
,2
]}

机构：

[1] Northwestern Polytech Univ Shenzhen, Res & Dev Inst, Shenzhen 518057, Peoples R China

[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, Xiaan 710072, Peoples R China

[3] Inst Semicond, Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[5] Guangdong Acad Sci, Inst New Mat, Guangzhou 510650, Peoples R China

[6] Leibniz Inst Festkorper & Werkstoffforsch IFW Dres, D-01171 Dresden, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2024年 / 627卷

基金：

中国国家自然科学基金;

关键词：

POWER-FACTOR; PERFORMANCE;

D O I：

10.1016/j.jcrysgro.2023.127510

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the crystal growth of SnxBi(2)Se(3) (x = 0 similar to 0.75) and examined the effect of Sn doping on the structure and thermoelectric properties of Bi2Se3. All the crystal samples of SnxBi(2)Se(3) were synthesized using a direct melt-growth. The results indicated that when the Sn doping content was <= 0.3, some Sn atoms were incorporated into the interlayers of Bi2Se3, thereby increasing the carrier concentration. In the intermediate to the high-temperature range, Sn doping improved the electrical conductivity of Bi2Se3, resulting in overall good performance in the power factor(PF). All the doped samples exhibited good ZT (a dimensionless figure of merit) in the intermediate to the high-temperature range, especially with the doping sample of x = 0.3 showing a maximum ZT value of 0.2 at 835 K.

引用

页数：6

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