A 2x2 paralleling GaN half-bridge power module for high-density 500kHz 3.3kW CLLC converter

A 2x2 paralleling GaN half-bridge power module is developed, where four GaN dies are encapsulated with minimizing parasitic inductances. It is suitable for high-power, highly efficient and high-density power converters under high frequency operation. It is confirmed that the module board has small parasitic components by electromagnetic field simulation. In this paper, we demonstrate a 3.3 kW CLLC converter which is operated at the switching frequency of around 500 kHz employing the developed 2x2 paralleling GaN half-bridge power module. The power density and the peak efficiency of the CLLC board are 8.8 W/ cm(3) and 97.1 % respectively, which correspond to 25 % and 0.3 % improvement compared with the case in which four discrete GaN power transistors are employed, respectively. The obtained improvements are attributable to the smaller parasitic inductances of the developed GaN module.