Strong coupling between a photon and a hole spin in silicon

被引:51
|
作者
Yu, Cecile X. [1 ]
Zihlmann, Simon [1 ]
Abadillo-Uriel, Jose C. [2 ]
Michal, Vincent P. [2 ]
Rambal, Nils [3 ]
Niebojewski, Heimanu [3 ]
Bedecarrats, Thomas [3 ]
Vinet, Maud [3 ]
Dumur, Etienne [1 ]
Filippone, Michele [2 ]
Bertrand, Benoit [3 ]
De Franceschi, Silvano [1 ]
Niquet, Yann-Michel [2 ]
Maurand, Romain [1 ]
机构
[1] Univ Grenoble Alpes, CEA, Grenoble INP, IRIG Pheliqs, Grenoble, France
[2] Univ Grenoble Alpes, CEA, IRIG MEM L Sim, Grenoble, France
[3] Univ Grenoble Alpes, CEA, LETI, Grenoble, France
基金
瑞士国家科学基金会; 欧洲研究理事会;
关键词
We thank J.-L. Thomassin and F. Gustavo for help in the fabrication of the NbN circuitry and M. Boujard and I. Matei for technical support in the lab. V. Renard is acknowledged for careful proofreading of the manuscript. This research has been supported by the European Union’s Horizon 2020 research and innovation programme under grant agreement nos. 951852 (QLSI project); 810504 (ERC project QuCube) and 759388 (ERC project LONGSPIN); as well as by the French National Research Agency (ANR) through the project MAQSi. S.Z. acknowledges support by an Early Postdoc Mobility fellowship (P2BSP2_184387) from the Swiss National Science Foundation;
D O I
10.1038/s41565-023-01332-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Strong intrinsic spin-orbit interaction unlocks the potential of circuit quantum electrodynamics with hole spins in silicon, resulting in strong spin-photon coupling of 300 MHz. Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbour quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible metal-oxide-semiconductor fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330 MHz, largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.
引用
收藏
页码:741 / +
页数:7
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