Perspectives of spin-valley locking devices

被引:3
|
作者
Tao, Lingling [1 ]
机构
[1] Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China
基金
中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;
关键词
spin-valley locking; spintronics; valleytronics; spin-orbit coupling; 73.90.+f; 85.75.-d; 71.70.Ej; 73.63.-b;
D O I
10.1088/1674-1056/acc809
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information. However, it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys. Spin-valley locking refers to the coupling between spin and valley degrees of freedom in the materials with large spin-orbit coupling (SOC) and enables the manipulation of valleys indirectly through controlling spins. Here, we review the recent advances in spin-valley locking physics and outline possible device implications. In particular, we focus on the spin-valley locking induced by SOC and external electric field in certain two-dimensional materials with inversion symmetry and demonstrate the intriguing switchable valley-spin polarization, which can be utilized to design the promising electronic devices, namely, valley-spin valves and logic gates.
引用
收藏
页数:7
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