Fabrication of Single-Crystal Violet Phosphorus Flakes For Ultrasensitive Photodetection

被引:4
|
作者
Da, Yumin [1 ,2 ]
Zhou, Yongheng [3 ]
Zhang, Shuai [1 ]
Li, Yang [1 ]
Jiang, Tongtong [1 ]
Zhu, Wenting [1 ]
Chu, Paul K. [4 ,5 ]
Yu, Xue-Feng [2 ]
Chen, Xiaolong [3 ]
Wang, Jiahong [2 ]
机构
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Southern Univ Sci & Technol, Dept Elect & Elect Engn, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China
[4] City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
[5] City Univ Hong Kong, Dept Biomed Engn, Tat Chee Ave, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; chemical vapor transport; low light photodetector; violet phosphorus; BAND-ALIGNMENT; GROWTH; PERFORMANCE;
D O I
10.1002/smll.202310276
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Violet phosphorus (VP) has attracted a lot of attention for its unique physicochemical properties and emerging potential in photoelectronic applications. Although VP has a van der Waals (vdW) structure similar to that of other 2D semiconductors, direct synthesis of VP on a substrate is still challenging. Moreover, optoelectronic devices composed of transfer-free VP flakes have not been demonstrated. Herein, a bismuth-assisted vapor phase transport technique is designed to grow uniform single-crystal VP flakes on the SiO2/Si substrate directly. The size of the crystalline VP flakes is an order of magnitude larger than that of previous liquid-exfoliated samples. The photodetector fabricated with the VP flakes shows a high responsivity of 12.5 A W-(1 )and response/recovery time of 3.82/3.03 ms upon exposure to 532 nm light. Furthermore, the photodetector shows a small dark current (<1 pA) that is beneficial to high-sensitivity photodetection. As a result, the detectivity is 1.38 x 10(13 )Jones that is comparable with that of the vdW p-n heterojunction detector. The results reveal the great potential of VP in optoelectronic devices as well as the CVT technique for the growth of single-crystal semiconductor thin films.
引用
收藏
页数:7
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