AFORS-HET simulation for investigating the performance of ZnO/n-CdS/p-CdTe/Ag solar cell depending on CdTe acceptor concentration and temperature

被引:8
|
作者
Metin, Bengul [1 ]
Kavasoglu, Nese [2 ]
Kavasoglu, Sertap [2 ]
机构
[1] Mugla Sitki Kocman Univ, Mugla Vocat Sch, Dept Elect & Energy, TR-48000 Mugla, Turkiye
[2] Mugla Sitki Kocman Univ, Fac Sci, Phys Dept, Solid State Elect Lab,Photovolta Mat & Device Lab, TR-48000 Mugla, Turkiye
关键词
Simulation; AFORS-HET; ZnO; n-CdS; p-CdTe; Ag solar cell; Electrical characterization; I-V analysis; Device physics; DEVICE STRUCTURE; THICKNESS; OPTIMIZATION; LAYERS;
D O I
10.1016/j.physb.2022.414504
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this study, a single junction dc photovoltaic solar cell simulation was carried out. ZnO/n-CdS/p-CdTe/Ag cell properties were investigated through the recognized 'Automatic Heterostructure Simulation (AFORS-HET)'. In the theoretical simulation process, the temperature was between 200 K and 400 K and the acceptor concentration of the CdTe layer was in the range of 1014 cm-3-1019 cm-3. The variation of Voc (open circuit voltage), Jsc (short circuit current density), FF (filling factor) and ii (efficiency) values with T (temperature) and Na (acceptor concentration) were investigated. It was observed that as Na increased, Voc values increased and Jsc values decreased. Voc, FF and ii decreased as the temperature was increased. Also, the sensitivity of FF to Na increased for acceptor concentration values greater than 1018 cm-3. It has been also shown that the filling factor decreased with photovoltaic current. ZnO/n-CdS/p-CdTe/Ag cells with an acceptor concentration greater than 1018 cm-3 exhibited high efficiency for all studied temperatures.
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页数:6
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