Growth and research on photoluminescence and radiation-induced luminescence properties of Dy-doped YVO4 single crystals

被引：3
|
作者：
Ichiba, Kensei [1 ]
Kato, Takumi [1 ]
Watanabe, Kenichi [2 ]
Nakauchi, Daisuke [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama, Ikoma, Nara 6300192, Japan
[2] Kyushu Univ, Grad Sch Engn, 744 Motooka,Nishi Ku, Fukuoka 8190395, Japan
来源：
OPTICAL MATERIALS | 2024年 / 149卷
基金：
日本学术振兴会;
关键词：
Sintillator; Radiation detection; Photoluminescence; YVO4; Optical floating zone technique; EU; LN; NANOPARTICLES; YIELD; SM;
D O I：
10.1016/j.optmat.2024.114982
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
0.05, 0.1, 0.5, and 1.0 % Dy-doped YVO4 single crystals were prepared by the optical floating zone technique to obtain photoluminescence (PL) and scintillation properties. All the samples showed the emission owing to charge transfer from V5+ ions to O2- ions inside [VO4]3- and the 4f-4f transitions of Dy3+ ions. Light yields exhibited 37,000 (0.05 % Dy), 42,000 (0.1 % Dy), 44,000 (0.5 % Dy), and 39,000 photons/MeV (1.0 % Dy), based on the pulse height spectra. In afterglow properties, afterglow levels were 37.7 (0.05 % Dy), 25.7 (0.1 % Dy), 23.2 (0.5 % Dy), and 20.6 (1.0 % Dy) ppm.
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页数：7
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