Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design

被引：6
|
作者：
Xiao, Wei [1 ,2 ]
Zheng, Xiaohong [3 ]
Hao, Hua [4 ]
Kang, Lili [5 ]
Zhang, Lei [6 ,7 ]
Zeng, Zhi [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Sci Isl Branch Grad Sch, Hefei 230026, Peoples R China
[3] Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R China
[4] Hangzhou Normal Univ, Sch Phys, Hangzhou 311121, Peoples R China
[5] Henan Univ, Inst Computat Mat Sci, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[6] Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
[7] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
来源：
NPJ COMPUTATIONAL MATERIALS | 2023年 / 9卷 / 01期
基金：
中国国家自然科学基金;
关键词：
THICKNESS;
D O I：
10.1038/s41524-023-01101-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We propose that the double barrier effect is expected to enhance the tunneling electroresistance (TER) in the ferroelectric tunnel junctions (FTJs). To demonstrate the feasibility of this mechanism, we design a model structure of Pt/BaTiO3/LaAlO3/Pt/BaTiO3/LaAlO3/Pt double barrier ferroelectric tunnel junction (DB-FTJ), which can be considered as two identical Pt/BaTiO3/LaAlO3/Pt single barrier ferroelectric tunnel junctions (SB-FTJs) connected in series. Based on density functional calculation, we obtain the giant TER ratio of 2.210 x 10(8)% in the DB-FTJ, which is at least three orders of magnitude larger than that of the SB-FTJs of Pt/BaTiO3/LaAlO3/Pt, together with an ultra-low resistance area product (0.093 K & omega;& mu;m(2)) in the high conductance state of the DB-FTJ. Moreover, it is possible to control the direction of polarization of the two single ferroelectric barriers separately and thus four resistance states can be achieved, making DB-FTJs promising as multi-state memory devices.
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页数：8
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