Fabrication of CoFeBSiO2 Films With Large Uniaxial Anisotropy by Facing Target Sputtering and its Application to High-Frequency Planar-Type Spiral Inductors

被引：1

作者：

Takamura, Yota ^{[1
]}

Nitta, Honami ^{[1
]}

Kawahara, Kazuma ^{[1
]}

Kaneko, Tadayuki ^{[1
]}

Ishido, Ryosuke ^{[2
]}

Miyazaki, Tatsuya ^{[2
]}

Hosoda, Naoki ^{[3
]}

Fujisaki, Keisuke ^{[3
]}

Nakagawa, Shigeki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Sch Engn, Meguro, Tokyo 1528553, Japan

[2] ROHM Co Ltd, Kyoto 6158585, Japan

[3] Toyota Technol Inst, Nagoya, Aichi 4680034, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2023年 / 59卷 / 11期

关键词：

High-frequency power electronics; micromagnetic inductors; nanogranular; soft-magnetic materials;

D O I：

10.1109/TMAG.2023.3291879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive study on fabrication of CoFeB-SiO2 films with large in-plane magnetic anisotropy for the use in high-frequency inductors in power electronics circuits was conducted. The magnetic films were deposited using facing target sputtering (FTS), which can introduce large uniaxial magnetic anisotropy in the plane. A multilayer structure consisting of CoFeB-SiO2 and SiO2 layers suppressed columnar growth and thus reduced undesired perpendicular magnetic anisotropy (PMA). As a result, a 1 mu m-thick magnetic layer was achieved with excellent soft-magnetic properties and no stripe domain structure. The effectiveness of these magnetic films was demonstrated by fabricating and characterizing planar-type spiral coils. This development of micromagnetic inductors using the magnetic layer shows great potential for use in high-frequency power electronics applications.

引用

页数：4