Magnetic Second-Order Topological Insulators in 2H-Transition Metal Dichalcogenides

被引:20
|
作者
Liu, Guodong [1 ,2 ]
Jiang, Haoqian [1 ,2 ]
Guo, Zhenzhou [1 ,2 ]
Zhang, Xiaoming [1 ,2 ]
Jin, Lei [1 ,2 ]
Liu, Cong [1 ,2 ]
Liu, Ying [1 ,2 ]
机构
[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
基金
中国国家自然科学基金;
关键词
2D material; ferromagnetic; higher order topological insulator; TRANSITION; MOS2;
D O I
10.1002/advs.202301952
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The transition metal dichalcogenides, 2H-VX2 (X = S, Se, Te), are identified as two-dimensional second-order topological insulator (SOTI) with a ferromagnetic ground state by first-principles calculations. The 2H-VX2 (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin-polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H-VX2 (X = S, Se, Te) in real space. The corner states are robust against symmetry-breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H-VX2 (X = S, Se, Te) materials can be maintained in the presence of spin-orbit coupling and are stable against magnetization. Overall, the results reveal 2H-VX2 (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.
引用
收藏
页数:7
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