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Magnetic Second-Order Topological Insulators in 2H-Transition Metal Dichalcogenides
被引:20
|作者:
Liu, Guodong
[1
,2
]
Jiang, Haoqian
[1
,2
]
Guo, Zhenzhou
[1
,2
]
Zhang, Xiaoming
[1
,2
]
Jin, Lei
[1
,2
]
Liu, Cong
[1
,2
]
Liu, Ying
[1
,2
]
机构:
[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
基金:
中国国家自然科学基金;
关键词:
2D material;
ferromagnetic;
higher order topological insulator;
TRANSITION;
MOS2;
D O I:
10.1002/advs.202301952
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The transition metal dichalcogenides, 2H-VX2 (X = S, Se, Te), are identified as two-dimensional second-order topological insulator (SOTI) with a ferromagnetic ground state by first-principles calculations. The 2H-VX2 (X = S, Se, Te) materials have a nontrivial band gap in two spin channels is found and exhibit topologically protected corner states with spin-polarization. These corner states only accommodate the quantized fractional charge (e/3). And the charge is bound at the corners of the nanodisk geometry 2H-VX2 (X = S, Se, Te) in real space. The corner states are robust against symmetry-breaking perturbations, which makes them more easily detectable in experiments. Further, it is demonstrated that the SOTI properties of 2H-VX2 (X = S, Se, Te) materials can be maintained in the presence of spin-orbit coupling and are stable against magnetization. Overall, the results reveal 2H-VX2 (X = S, Se, Te) as an ideal platform for the exploration of magnetic SOTI and suggest its great potential in experimental detection.
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页数:7
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