Promoting Water Oxidative Hydrogen Peroxide Production by Dynamic Anion Exchange on BiVO4 Photoanodes

被引:11
|
作者
Wan, Shipeng [1 ,2 ,3 ]
Jin, Jie [3 ]
Dong, Chaoran [1 ,2 ]
Lu, Yuan [3 ]
Zhong, Qin [1 ,2 ]
Zhang, Kan [1 ,2 ]
Park, Jong Hyeok [3 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China
[2] Nanjing Univ Sci & Technol, Sch Chem & Chem Engn, Nanjing 210094, Peoples R China
[3] Yonsei Univ, Dept Chem & Biomol Engn, Seoul 120749, South Korea
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
water oxidation; hydrogenperoxide; dynamicanion exchange; BiVO4; photoanode; mechanismanalysis; WO3/BIVO4; PHOTOANODE; H2O2; PRODUCTION; TIO2; SURFACES; CO2; REDUCTION; CARBONATE; PHOSPHATE; ADSORPTION; O-2; MECHANISM; AL2O3;
D O I
10.1021/acscatal.3c03380
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photoelectrochemical (PEC) water oxidative H2O2 production through HCO3- or CO3- medium has been attracting great research interest, yet it suffers from low activity and instability. Herein, we report an anion exchange strategy using a phosphate (PO43-) modified BiVO4 (PBVO) photoanode to enhance the HCO3- oxidation kinetics at the Helmholtz layer of the semiconductor-electrolyte (S-E) interface for superior H2O2 production. As a result, an average PEC H2O2 Faradaic efficiency (FE) of 82.6% was achieved over the optimized PBVO photoanode with the best FE of 92.1% and a production rate of 66.5 mu mol h(-1). Moreover, the stable PEC water splitting to H-2 and H2O2 from full-cell configuration is realized, with a H2O2 accumulation concentration of 2.34 x 10(-3) M after 6 h consecutive irradiation. The excellent PEC performance can be ascribed to the fact that PO(4)(3-)on the surface of the PBVO photoanode exchanges with HCO3- to form the CO3- adsorbed BiVO4 photoanode during the process of water oxidation, kinetically promoting charge transfer at the S-E interface. Simultaneously, H2PO4- that is formed during the exchange of PO43- and HCO3- in the inner Helmholtz layer can stabilize H2O2. This work provides a new insight for understanding PEC oxidation processes in the Helmholtz layer of the S-E interface.
引用
收藏
页码:14845 / 14852
页数:8
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