共 50 条
- [1] Gate Impedance Characterization and Performance Evaluation of 3.3kV Silicon Carbide MOSFETs 2016 51ST INTERNATIONAL UNIVERSITIES POWER ENGINEERING CONFERENCE (UPEC), 2016,
- [2] A 3.3kV IGBT module and application in Modular Multilevel converter for HVDC 2012 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE), 2012, : 1944 - 1949
- [3] A 3.3 kV Silicon Carbide MOSFET Based Building Block for Medium-Voltage Ultra-Fast DC Chargers 2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2023, : 1693 - 1700
- [4] Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs 2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 3140 - 3144
- [5] Performance Improvements Using Silicon Carbide Hybrid IGBT Modules in Traction Application 2016 INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC), 2016,
- [6] Design and Characterization of a Neutral-Point-Clamped Inverter Using Medium-Voltage Silicon Carbide Power Modules 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 2912 - 2919
- [8] Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter SN Applied Sciences, 2019, 1
- [9] High-Voltage High-Frequency Inverter using 3.3kV SiC MOSFETs 2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC), 2012,
- [10] Benchmarking and Qualification of Gate Drivers for Medium Voltage (MV) Operation using 10 kV Silicon Carbide (SiC) MOSFETs THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 441 - 447