Tin Solution Growth and Electrical Properties of the Semiconductor Compound CuSi2P3

被引：0

作者：

M.S.Omar

机构：

[1] University of SalahaddinARBIL—IRAQ

[2] College of Science

[3] Physics Department

来源：

人工晶体学报 | 1988年 / Z1期

关键词：

Tin Solution Growth and Electrical Properties of the Semiconductor Compound CuSi2P3;

D O I：

10.16553/j.cnki.issn1000-985x.1988.z1.136

中图分类号：

学科分类号：

摘要：

The growth of some ternary Ⅰ-Ⅳ2-Ⅴ3 compounds using solution techni-que has been described.This technique has been found particularly usefulin the preparation of CuSiPfrom different compounds of this group and thecrystals obtained were of 0.2×3×5mm~3.

引用

页码：247 / 247

页数：1