High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

被引：0

作者：

徐云 ^{[1
]}

王永宾 ^{[1
]}

张宇 ^{[1
]}

宋国峰 ^{[1
]}

陈良惠 ^{[1
]}

机构：

[1] Institute of Semiconductors,Chinese Academy of Sciences

来源：

Chinese Physics B | 2013年 / 09期

基金：

北京市自然科学基金;

关键词：

GaIn(As)Sb/AlGaAsSb diode lasers; threshold current density; output power;

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

引用

页码：443 / 445

页数：3

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