High-performance electroabsorption modulator

被引：1

作者：

张伟 ^{[1
]}

潘教青 ^{[1
]}

朱洪亮 ^{[1
]}

王桓 ^{[1
]}

王圩 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

来源：

半导体学报 | 2009年 / 30卷 / 09期

基金：

国家高技术研究发展计划(863计划);

关键词：

electroabsorption modulator; quantum well intermixing; intra-step quantum well;

D O I：

暂无

中图分类号：

TP21 [自动化元件、部件];

学科分类号：

0804 ; 080401 ; 080402 ;

摘要：

A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing,using only a twostep low-pressure metal-organic vapor phase epitaxial process.An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties.In the experiment high modulation speed and high extinction ratio are obtained simultaneously,the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz,and extinction ration is as high as 16 dB.

引用

页码：53 / 56

页数：4

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