Structure characteristics and piezoresistive effect of nc-Si:H films

被引：1
|
作者：
何宇亮
武旭辉
林鸿溢
王珩
李冲
机构：
[1] China
[2] Beijing 100083
[3] Amorphous Physics Research Laboratory
[4] Beijing University of Aeronautics and Astronautics
来源：
Chinese Science Bulletin | 1995年 / 20期
基金：
中国国家自然科学基金;
关键词：
nano-crystalline silicon film; piezoresistive effect;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain size of 3—5nm and the volume crystalline fraction of X=(50±5)%. The spacing between grains is constituted by a great number of interfaces, as shown in fig. 1. From the figure, it is estimated that the thickness of the interfaces is 1—4 atomic layers (≤1nm) and the volume fraction of the interfaces is about 40%. It is obvious that the microstructure of the nc-Si:H films is quite diffe rent
引用
收藏
页码：1684 / 1687
页数：4
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