Lead zirconate titanate behaviors in an LDMOS

被引：0

作者：

翟亚红 ^{[1
]}

李威 ^{[1
]}

李平 ^{[1
]}

李俊宏 ^{[1
]}

胡滨 ^{[1
]}

霍伟荣 ^{[1
]}

范雪 ^{[1
]}

王刚 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

来源：

Chinese Physics B | 2013年 / 22卷 / 07期

基金：

中国国家自然科学基金;

关键词：

laterally diffused metal oxide semiconductor (LDMOS); lead zirconate titanate; memory behavior; retention;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (ID-VG) memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

引用

页码：582 / 585

页数：4

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