The ferroelectric thin films of SrBi2Ta2O9 prepared using pulsed laser deposition

被引：0
|
作者：
YANG Pingxiong
机构：
来源：
ChineseScienceBulletin | 1997年 / 07期
关键词：
SBT; pulsed laser deposition; ferroelectric thin film;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
LATELY, the ferroelectric random access memories (FRAM) have become one of the most attractive subjects in solid devices due to faster access time as dynamic RAM, the non-volatility as erasable programmable read-only memory, radiation-hardness and lower power require
引用
收藏
页码：612 / 614
页数：3
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