基于EMMI定位的GaN HEMT耐正向可靠性研究

[1] Asymmetric Bipolar Injection in a Schottky-Metal/p-GaN/AlGaN/GaN Device Under Forward Bias [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1389 - 1392

[2] Mechanism of hot electron electroluminescence in GaN-based transistors [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (43)

[3] On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress[J] . M. Montes Bajo,C. Hodges,M. J. Uren,M. Kuball.Applied Physics Letters . 2012 (3)

[4] A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current[J] . Bradley D. Christiansen,Eric R. Heller,Ronald A. Coutu,Ramakrishna Vetury,Jeffrey B. Shealy.Active and Passive Electronic Components . 2012

[5] Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors [J]. APPLIED PHYSICS LETTERS, 2010, 97 (06)

[6] Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy [J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) : 756 - 760

[7] Origin of the red luminescence in Mg-doped GaN [J]. APPLIED PHYSICS LETTERS, 2006, 89 (02)

[8] Luminescence properties of defects in GaN[J] . Michael A. Reshchikov,Hadis Morko?§.Journal of Applied Physics . 2005 (6)

[1] Asymmetric Bipolar Injection in a Schottky-Metal/p-GaN/AlGaN/GaN Device Under Forward Bias [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1389 - 1392

[2] Mechanism of hot electron electroluminescence in GaN-based transistors [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (43)

[3] On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress[J] . M. Montes Bajo,C. Hodges,M. J. Uren,M. Kuball.Applied Physics Letters . 2012 (3)

[4] A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current[J] . Bradley D. Christiansen,Eric R. Heller,Ronald A. Coutu,Ramakrishna Vetury,Jeffrey B. Shealy.Active and Passive Electronic Components . 2012

[5] Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors [J]. APPLIED PHYSICS LETTERS, 2010, 97 (06)

[6] Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy [J]. JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) : 756 - 760

[7] Origin of the red luminescence in Mg-doped GaN [J]. APPLIED PHYSICS LETTERS, 2006, 89 (02)

[8] Luminescence properties of defects in GaN[J] . Michael A. Reshchikov,Hadis Morko?§.Journal of Applied Physics . 2005 (6)