Observation of Coulomb blockade and ballistic tunneling in graphene single electron transistor

被引：0
|
作者：
TAN ZhenBing
机构：
来源：
Science China(Physics,Mechanics & Astronomy) | 2012年 / 01期
基金：
中国国家自然科学基金;
关键词：
graphene; single electron transistor; Coulomb blockade; tunneling; quantum Hall state;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A square graphene single electron transistor （SET） was defined with two side gates, and its transport was studied at low tem- perature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carriers through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point.
引用
收藏
页码：7 / 10
页数：4
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