低温烧结Mg4Nb2O9微波介质陶瓷

被引:0
|
作者
刘长菊
苏未安
机构
[1] 江西理工大学理学院
关键词
微波介质陶瓷; 低温烧结Mg4Nb2O9; 刚玉型晶体结构; 助熔剂V2O5;
D O I
10.16552/j.cnki.issn1001-1625.2015.03.024
中图分类号
TQ174.1 [基础理论];
学科分类号
摘要
研究了V2O5对Mg4Nb2O9陶瓷的烧结温度、相结构和微波介电性能的影响。结果表明,添加1%8%的V2O5,能使该陶瓷的烧结温度降低到1000~1050℃而对其微波介电性能的影响很小,材料的主晶相为有序型刚玉结构的Mg4Nb2O9,存在Mg4Nb2O6和Mg5Nb4O15杂相而没有检测到V2O5的存在。陶瓷的密度对微波介电性能起着决定性作用,介电常数εr与密度成线性关系(在99.99%的置信限内,其相关系数为0.98252),Q·f值与密度的关系较复杂。添加1%的V2O5,将Mg4Nb2O9陶瓷的烧结温度降低到了1050℃,得到了εr=12.72,Q·f=151040GHz的优异性能。
引用
收藏
页码:782 / 787
页数:6
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