Spin Coating Epitaxial Films

被引:0
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作者
常晶晶 [1 ,2 ]
机构
[1] 不详
[2] State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,Shaanxi Joint Key Laboratory of Graphene,School of Microelectronics,Xidian University
[3] 不详
[4] Advanced Interdisciplinary Research Center for Flexible Electronics,Xidian University
[5] 不详
关键词
Spin Coating Epitaxial Films;
D O I
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中图分类号
TB383.2 [];
学科分类号
摘要
<正>Epitaxy is usually used to produce high quality crystals with atomic perfection. Up to now,many semiconductor crystals of functional materials could be obtained by epitaxial growth techniques,such as molecular beam epitaxy,chemical vapor deposition,and liquid-phase epitaxy. However,these techniques are expensive,sophisticated,and not compatible with large area production. For solution-based deposition of epitaxial films such as hydrothermal processing[1],chemical bath deposition[2-3],and electrodeposition[4-5],specific conditions such as high temperature and pressure,or conducting substrates are commonly needed. Since single
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页码:1919 / 1920
页数:2
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