X-site doping in ABX3 triggers phase transition and higher Tc of the dielectric switch in perovskite

Material stability is always the key factor for applied materials especially the working environment that requires higher temperature sensitivity or temperature fluctuation range.In which,the stimulusresponse perovskite materials are just sensitive to stability to ensure the accuracy and stability of the signals,in the applied devices of batteries and memory storage devices and so on.However,it is still a tremendous challenge to improve the stability of perovskite materials,and maintain reliability in the devices.Here,a novel ABXX’(X-site doping in an ABX) compound [CEMP]-[CdBr(SCN)](1,CEMP=1-(2-chloro-ethyl)-1-methyl-piperidine) with remarkable high-temperature reversible dielectric switching behavior was proposed.The strategy of [SCN]-doping in perovskite for improving the stability was successfully achieved.Meanwhile,the steric hindrance is increased while the energy barrier is also increased by replacing hydrogen with flexible groups,which leads to a high-temperature reversible phase transition.The new finding provides a new direction to enrich new applications and design ideas of perovskite materials.Especially the X-site strategy of doping or substitution in the ABX,it will promote ingenious and perfect experimental results in material synthesis and performance improvement by chemistry disciplines.