AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer

被引：0

作者：

李祥东 ^{[1
]}

张进成 ^{[1
]}

邹瑜 ^{[1
]}

马学智 ^{[2
]}

刘畅 ^{[2
]}

张苇杭 ^{[1
]}

温慧娟 ^{[1
]}

郝跃 ^{[1
]}

机构：

[1] Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

[2] School of Electronic Science and Engineering,Nanjing University

来源：

Chinese Physics Letters | 2015年 / 32卷 / 07期

基金：

中国国家自然科学基金;

关键词：

AlGaN Channel High Electron Mobility Transistors with an Al_xGa; x)N/GaN Composite Buffer Layer;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We report an AlGaN channel high electron mobility transistor(HEMT) on a sapphire substrate with a 1000-nm AlxGa1-xN(x = 0-0.18)/GaN composite buffer layer.With a significant improvement of crystal quality,the device features a high product of ns·μn.The AlGaN channel HEMTs presented show improved performance with respect to the conventional AlGaN channel HEMTs,including the on-resistance reduced from 31.2 to 8.1 Ω·mm,saturation drain current at 2 V gate bias promoted from 218 to 540mA/mm,peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174mS/mm,and reverse gate leakage current reduced from1.85 × 10-3to 2.15 × 10-5mA/mm at VGD=-20 V.

引用

页码：153 / 156

页数：4

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