Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy

被引:0
|
作者
WANG XiaoDan [1 ]
ZENG XiongHui [2 ]
XU Ke [2 ]
MAO HongMin [1 ]
MA ChunLan [1 ]
机构
[1] Department of Physics, Suzhou University of Science and Technology
[2] Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
Eu; GaN; energy level; spectrum;
D O I
暂无
中图分类号
TN304.2 [化合物半导体];
学科分类号
摘要
1.5at% Eu-doped GaN powders were prepared by a co-precipitation method.Powder X-ray diffraction(XRD)results shows that there is only the wurtzite phase.Cathodoluminescence spectra were measured at room temperature and liquid nitrogen temperature,respectively.The band-to-band luminescence of GaN was shifted from 373 nm to 368 nm with the temperature decreasing from room temperature to liquid nitrogen temperature.The luminescence peaks at 537,557,579,590,597,614,653 and 701 nm are attributed to the Eu ions related transitions in the host of GaN powders and the peak positions were not influenced by the variation of temperature.With the increase of accelerating voltage,the intensity of all luminescence peaks was increased.The strongest luminescence peak at 614 nm shows non-symmetrical shape and is composed of 612,615 and 621 nm through Lorentzian fitting,which indicates there are oxygen and nitrogen environments of the Eu3+ions in the Eu-doped GaN powders.
引用
收藏
页码:628 / 631
页数:4
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