Novel silicon-controlled rectifier(SCR) for digital and high-voltage ESD power supply clamp

被引：0

作者：

ZHANG Peng ^{[1
]}

WANG Yuan ^{[2
]}

ZHANG Xing ^{[2
]}

MA XiaoHua ^{[1
]}

HAO Yue ^{[1
]}

机构：

[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

[2] Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking University

来源：

Science China(Information Sciences) | 2014年 / 57卷 / 02期

基金：

中国国家自然科学基金;

关键词：

electrostatic discharge(ESD); SCR; latch-up immunity; holding voltage; power supply clamp; high voltage;

D O I：

暂无

中图分类号：

TM461 [整流器];

学科分类号：

摘要：

Due to latch-up issue,the main problem of silicon-controlled rectifier(SCR)for power supply clamps in on-chip ESD protection is its inherent low holding voltage,especially in high-voltage applications.In this paper,we proposed a MOS-inside SCR(MISCR)showing nearly no snapback character and good ESD robustness,which is qualified for on-chip power clamp ESD protection.The stacked device achieves a series of triggering and holding voltage by altering the stacking number,which can also be used for the high voltage ESD power supply clamp applications.

引用

页码：291 / 296

页数：6

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