Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3

The carrier transport mechanism of Mg/Au ohmic contact for lightly doped β-GaOis investigated. An excellent ohmic contact has been achieved when the sample was annealed at 400 °C and the specific contact resistance is 4.3 × 10-4 Ω·cm2. For the annealed sample, the temperature dependence of specific contact resistance is studied in the range from 300 to 375 K. The specific contact resistance is decreased from 4.3 × 10-4 to 1.59 × 10-4 Ω·cm2 with an increase of test temperature. As combination with the judge of E00, the basic mechanism of current transport is dominant by thermionic emission theory. The effective barrier height between Mg/Au and β-GaOis evaluated to be 0.1 eV for annealed sample by fitting experimental data with thermionic emission model.