High performance active image sensor pixel design with circular structure oxide TFT附视频

被引：0

作者：

Rui Geng ^{[1
]}

Yuxin Gong ^{[2
]}

机构：

[1] School of International Education, Dalian Polytechnic University

[2] School of Information Science and Engineering, Shandong

来源：

Journal of Semiconductors | 2019年 / 02期

关键词：

a-IGZO TFT; active image sensor; circular structure; high gain;

D O I：

暂无

中图分类号：

TN321.5 []; TP212 [发送器（变换器）、传感器];

学科分类号：

080202 ;

摘要：

We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide(aIGZO) thin-film transistors(TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.

引用

页码：29 / 32

页数：4

共 3 条

[1] Simulation model for electron irradiated IGZO thin film transistors[J]. G K Dayananda,C Shantharama Rai,A Jayarama,Hyun Jae Kim.Journal of Semiconductors. 2018(02)
[2] Present status of amorphous In–Ga–Zn–O thin-film transistors[J] . Toshio Kamiya,Kenji Nomura,Hideo Hosono.Science and Technology of Advanced Materials . 2010 (4)
[3] X-ray detector-on-plastic with high sensitivity using low cost,solution-processed organic photodiodes .2 Gelinck G H,Kumar A,Van Der Steen J L P,et al. IEEE Trans Electron Devices . 2016

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