Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering

Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and rela- tively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature.The structural,electrical,and optical properties of the films deposited under different Ar pressure were investigated. XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis.The resistivity increases as Ar pressure increases.The lowest resistivity achieved is 9.2×10;Ω·cm for the samples deposited at Ar pressure of 0.6 Pa with a Hall mobility of 30 cm;.V;·s;and a carrier concentration of 2.3×10;cm;.The average transmittance in the visible range exceeds 88% for all the samples.The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.