Determination of the Deep Levels of Transition Metals in n-Type Silicon by Using DLTS Method

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作者：
Sun Yicai Wang Zhijin Hebei Technical InstituteDang Jiping Hebei Semiconductor Institute
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来源：
RareMetals | 1989年 / 03期
关键词：
DLTS; Determination of the Deep Levels of Transition Metals in n-Type Silicon by Using DLTS Method;
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摘要：
1.IntroductionSince the correspondence between theimpurity and its energy levels within the bandsis not exactly known enough,it is difficult toassign the impurity according to its levels.Inthis work,several metallic impurities were in-tentionally doped into samples,then their en-
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页码：61 / 62
页数：2
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