一种低功耗无片外电容LDO的设计

被引:7
作者
梁绪亮
许高斌
解光军
程心
易茂祥
机构
[1] 合肥工业大学电子科学与应用物理学院
关键词
低压差稳压器; 摆率增强电路; 瞬态响应; 静态电流;
D O I
10.13911/j.cnki.1004-3365.2016.02.013
中图分类号
TM44 [稳定器];
学科分类号
080801 ;
摘要
基于SMIC 0.18μm CMOS工艺,设计了一款输入电压为1.8V、输出电压为1.6V的低功耗无片外电容低压差线性稳压器(LDO),其静态电流仅为5μA。该电路采用一种新型摆率增强电路,通过检测输出电压的变化实现对功率管的瞬态调节。片内采用密勒补偿使主次极点分离,整个系统在负载范围内具有良好的稳定性。仿真结果显示,该LDO在负载电流以99mA/1μs跳变时,输出电压下冲为59mV,上冲为60mV,响应时间约为1.7μs。
引用
收藏
页码:202 / 206
页数:5
相关论文
共 5 条
[1]  
A low voltage and low ground current low-dropout regulator with transient enhanced circuit for SoC. WANG J H,LAI S W,HUANG C S,et al. ICGCS . 2010
[2]  
A Capacitor-Less CMOS Active Feedback Low-Dropout Regulator With Slew-Rate Enhancement for Portable On-Chip Application. Ho, E.N.Y.,Mok, P.K.T. Circuits and Systems II: Express Briefs, IEEE Transactions on . 2010
[3]  
Dynamic bias-current boosting technique for ultralow-power low-dropout regulator in biomedical applications. Ho, Marco,Leung, Ka Nang. IEEE Transactions on Circuits and Systems II: Express Briefs . 2011
[4]  
A capacitorless low drop-out (LDO)regulator with improved transient response for system-on-chip applications. LOVARAJU C,MAITY A,PATRA A. 26th VLSID&12th Int Conf Embedded Syst . 2013
[5]  
A sub-1μA improvedtransient CMOS low-dropout regulator without minimal ESR requirement. GUO J P,LEUNG K N. TENCON . 2009