Quantum dot quantum cascade photodetector using a laser structure

被引：0

作者：

王风娇 ^{[1
]}

卓宁 ^{[1
]}

刘舒曼 ^{[1
,2
]}

任飞 ^{[1
]}

翟慎强 ^{[1
]}

刘俊岐 ^{[1
,2
]}

张锦川 ^{[1
]}

刘峰奇 ^{[1
,2
]}

王占国 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

[2] College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences

来源：

Chinese Optics Letters | 2017年 / 15卷 / 10期

基金：

中国国家自然科学基金;

关键词：

As; In; Quantum dot quantum cascade photodetector using a laser structure; QDs; QCD;

D O I：

暂无

中图分类号：

TN15 [光电器件、光电管]; TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

We report on a quantum dot quantum cascade detector（QD-QCD）, whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski–Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10;Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected.

引用

页码：89 / 93

页数：5

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