Field Emission Characteristics from BN-coated Diamond Films

被引：0
|
作者：
周丹 [1 ]
徐立铭 [1 ]
顾广瑞 [1 ]
机构：
[1] 延边大学理学院物理系
来源：
延边大学学报(自然科学版) | 2009年 / 03期
关键词：
金刚石膜; 场发射; 氮化硼薄膜;
D O I：
10.16379/j.cnki.issn.1004-4353.2009.03.022
中图分类号：
TN304.18 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
利用热丝化学气相沉积(HFCVD)方法在Si衬底上生长了4μm厚的金刚石膜,然后利用射频磁控溅射方法在金刚石膜上沉积了100 nm厚的六角氮化硼(h-BN)薄膜.在超高真空系统中测试了覆盖氮化硼(BN)薄膜前后金刚石膜的场发射特性,结果表明覆盖BN薄膜后的金刚石膜的场发射特性明显提高,开启电场由14 V/μm上升到8 V/μm.F-N曲线表明,覆盖BN薄膜后的金刚石膜在强电场区域的场增强因子有所降低,这可能归因于场发射点随着电场的增强而改变.
引用
收藏
页码：230 / 234
页数：5
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