Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure

被引：0

作者：

郝润润 ^{[1
]}

臧如雪 ^{[1
]}

周铁 ^{[1
]}

康仕寿 ^{[1
]}

颜世申 ^{[1
]}

刘国磊 ^{[1
]}

韩广兵 ^{[1
]}

于淑云 ^{[1
]}

梅良模 ^{[1
]}

机构：

[1] School of Physics and State Key Laboratory of Crystal Materials,Shandong University

来源：

Chinese Physics B | 2019年 / 28卷 / 03期

基金：

中国国家自然科学基金;

关键词：

spin current; magnetic insulator; inverse Hall effect;

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The magnetization-direction-dependent inverse spin Hall effect(ISHE) has been observed in NiFe film during spin Seebeck measurement in IrMn/NiFe/Cu/yttrium iron garnet(YIG) multilayer structure, where the YIG and NiFe layers act as the spin injector and spin current detector, respectively. By using the NiFe/IrMn exchange bias structure, the magnetization direction of YIG(MYIG) can be rotated with respect to that of NiFe(MNiFe) with a small magnetic field, thus allowing us to observe the magnetization-direction-dependent inverse spin Hall effect voltage in NiFe layer. Compared with the situation that polarization direction of spin current(σs) is perpendicular to MNiFe, the spin Seebeck voltage is about 30% larger than that when σs and MNiFe are parallel to each other. This phenomenon may originate from either or both of stronger interface or bulk scattering to spin current when σs and MNiFe are perpendicular to each other. Our work provides a way to control the voltage induced by ISHE in ferromagnets.

引用

页码：333 / 336

页数：4

共 15 条

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Hao, Runrun
Zang, Ruxue
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Kang, Shishou
Yan, Shishen
Liu, Guolei
Han, Guangbing
Yu, Shuyun
Mei, Liangmo
CHINESE PHYSICS B, 2019, 28 (03)
[2] Optimization of Spin-Valve Structure NiFe/Cu/NiFe/IrMn for Planar Hall Effect Based Biochips
Tu, Bui Dinh
Cuong, Le Viet
Hung, Tran Quang
Giang, Do Thi Huong
Danh, Tran Mau
Duc, Nguyen Huu
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IEEE TRANSACTIONS ON MAGNETICS, 2009, 45 (06) : 2378 - 2382
[3] Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure
Chechenin, N. G.
Chernykh, P. N.
Dushenko, S. A.
Dzhun, I. O.
Goikhman, A. Y.
Rodionova, V. V.
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2014, 27 (06) : 1547 - 1552
[4] Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure
N. G. Chechenin
P. N. Chernykh
S. A. Dushenko
I. O. Dzhun
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V. V. Rodionova
Journal of Superconductivity and Novel Magnetism, 2014, 27 : 1547 - 1552
[5] Angle dependent inverse spin Hall effect in NiFe/Pt thin film
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Peng Bin
Zhang Wan-Li
ACTA PHYSICA SINICA, 2015, 64 (24)
[6] Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films
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Raja, M. Manivel
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Haldar, Arabinda
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (30)
[7] Size effect on NiFe/Cu/NiFe/IrMn spin-valve structure for an array of PHR sensor element
Oh, S. J.
Le, Tuan Tu
Kim, G. W.
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (12): : 4075 - 4078
[8] Magnetization direction dependent spin Hall effect in 3d ferromagnets
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Hayashi, Masamitsu
PHYSICAL REVIEW B, 2020, 102 (14)
[9] Separation of inverse spin hall effect and spin rectification effect by inverting spin injection direction in NiFe/ta bilayers film
Wang, Qiuru
Zhang, Wanli
Peng, Bin
Zhang, Wenxu
SOLID STATE COMMUNICATIONS, 2016, 245 : 15 - 19
[10] Optimization of planar Hall effect sensor for magnetic bead detection using spin-valve NiFe/Cu/NiFe/IrMn structures
Bui Dinh Tu
Le Viet Cuong
Do Thi Huong Giang
Tran Mau Danh
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APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08), 2009, 187

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