Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

被引：0
|
作者：
陈建军 [1 ]
陈书明 [1 ]
梁斌 [1 ]
何益百 [1 ]
池雅庆 [1 ]
邓科峰 [1 ]
机构：
[1] School of Computer Science,National University of Defense Technology
来源：
Chinese Physics B | 2011年 / 20卷 / 11期
基金：
中国国家自然科学基金;
关键词：
annular gate nMOSFETs; total ionizing dose effect; hot carrier effect; annular source nMOSFETs;
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose(TID) effect.However,their capability of resisting the hot carrier effect(HCE) has also been proven to be very weak.In this paper,the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail,and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation.The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18μm bulk CMOS technology.In addition,the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers(the annular source nMOSFETs) are also studied to provide a possible alternative for the designers.
引用
收藏
页码：346 / 352
页数：7
相关论文
共 50 条
  • [1] Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs
    Chen Jian-Jun
    Chen Shu-Ming
    Liang Bin
    He Yi-Bai
    Chi Ya-Qing
    Deng Ke-Feng
    CHINESE PHYSICS B, 2011, 20 (11)
  • [2] Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices
    Yu, Hao
    Zhou, Wei
    Liu, Hongxia
    Wang, Shulong
    Chen, Shupeng
    Liu, Chang
    MICROMACHINES, 2024, 15 (08)
  • [3] Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130 nm partially depleted SOI I/O nMOSFETs
    Zhou, Hang
    Liu, Yang
    Zhang, Ying
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (03)
  • [4] Total Ionizing Dose Effects on the Performance and Hot Carrier Degradation of LDMOS Transistors
    Mahajan, Bikram Kishore
    Chen, Yen-Pu
    Mamun, M. Asaduz Zaman
    Alam, Muhammad Ashraful
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 72 (02) : 543 - 549
  • [5] Hot Carrier injection effect on threshold voltage of NMOSFETs
    Lahbib, Insaf
    Doukkali, Aziz
    Martin, Patrick
    Imbert, Guy
    Raoulx, Denis
    2015 11TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), 2015, : 164 - 167
  • [6] The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
    Baoshun Wang
    Jiangwei Cui
    Qi Guo
    Qiwen Zheng
    Ying Wei
    Shanxue Xi
    Journal of Semiconductors, 2020, (12) : 11 - 15
  • [7] The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
    Wang, Baoshun
    Cui, Jiangwei
    Guo, Qi
    Zheng, Qiwen
    Wei, Ying
    Xi, Shanxue
    JOURNAL OF SEMICONDUCTORS, 2020, 41 (12)
  • [8] The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
    Baoshun Wang
    Jiangwei Cui
    Qi Guo
    Qiwen Zheng
    Ying Wei
    Shanxue Xi
    Journal of Semiconductors, 2020, 41 (12) : 11 - 15
  • [9] Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs
    Yao, Ruxue
    Lu, Hongliang
    Zhang, Yuming
    Zhang, Yutao
    Qiao, Jing
    Sun, Jing
    Xun, Mingzhu
    Yu, Gang
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (03) : 456 - 462
  • [10] Total Dose Dependence of Hot Carrier Injection Effect in the NMOS Devices
    He Yujuan
    Zhang Xiaowen
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
12345