Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

被引：0
|
作者：
陈峻 [1 ,2 ]
范广涵 [1 ]
张运炎 [3 ]
庞玮 [2 ]
郑树文 [1 ]
姚光锐 [1 ]
机构：
[1] Institute of Opto-Electronic Materials and Technology,South China Normal University
[2] Experimental Teaching Center,Guangdong University of Technology
[3] Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology
来源：
Chinese Physics B | 2012年 / 21卷 / 05期
基金：
中国国家自然科学基金;
关键词：
electron-blocking layer; light-emitting diode; internal quantum efficiency;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
The performance of InGaN blue light-emitting diodes(LEDs) with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer(EBL) has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.
引用
收藏
页码：690 / 695
页数：6
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