SWITCHING CHARACTERISTICS AND ANALYSIS OF RESONANT TUNNELING DIODES

被引：0
|
作者：
张世林
朱怡
郭维廉
机构：
[1] SCHOOL OF ELECTRONIC INFORMATION ENGINEERING TIANJIN UNIVERSITY TIANJIN 300072
[2] CHINA
来源：
Transactions of Tianjin University | 2006年 / 01期
基金：
中国国家自然科学基金;
关键词：
resonant tunneling diodes ( RTD); S parameter; equivalent circuit; switching time;
D O I：
暂无
中图分类号：
TN312.2 [];
学科分类号：
摘要：
RESONANT TUNNELING DIODE ( RTD ) OF ALAS/LNGAAS/AIAS DOUBLE BARRIER-SINGLE WELL STRUCTURE WAS DESIGNED AND FABRICATED. THE DEVICES SHOWED CURRENT-VOLTAGE CHARACTERISTICS WITH PEAK-VALLEY CURRENT RATIO OF 4 : I AT ROOM TEMPERATURE. THE SCATTERING PARAMETER OF RTD WAS MEASURED BY USING AN HPS510(C) NETWORK ANALYZER. EQUIVALENT CIRCUIT PARAMETERS WERE OBTAINED BY CURVE FITTING AND OPTIMIZED. THE RTD SWITCHING TIME WAS ESTIMATED USING THE MEASURED CAPACITANCE AND AVERAGE NEGATIVE DIFFERENTIAL RESISTANCE. THE MINIMUM RISE TIME OF THE SAMPLE WAS ESTIMATED TO BE 21 PS.
引用
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页码：19 / 22
页数：4
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