An Improved Y-source Inverter with the Capability of Absorbing Bus Voltage Spike

In order to avoid the bus voltage spikes caused by leakage inductance endangering the normal operation of the inverter, based on the improved Y-source inverter, the traditional clamping structure and voltage peak absorption circuit are introduced, and a high step-up and low-voltage stress improved Y-source inverter with the capability of absorbing bus voltage spike is proposed. This topology fully utilizes the structural characteristics of the improved Y-source inverter itself, and further increases the DC-side voltage gain on the basis of ensuring the busbar voltage peak absorption capacity, while reducing the capacitor voltage stress. This paper demonstrates the superiority of the proposed topology over improved Y-source inverter topology by analyzing its working principle and voltage gain, simulation and experiment platform are constructed to perform the circuit simulation and experiment, and the correctness of the theoretical analysis of the proposed inverter and the effectiveness of the busbar voltage peak absorption capacity are verified.