High-power performance studies of an S-band high-gradient accelerating cavity for medical applications

被引：0

作者：

Martinez-Reviriego, P. ^{[1
]}

Fuster-Martinez, N. ^{[1
]}

Esperante, D. ^{[1
,2
]}

Boronat, M. ^{[1
]}

Gimeno, B. ^{[1
]}

Blanch, C. ^{[1
]}

Gonzalez-Iglesias, D. ^{[1
]}

Martin-Luna, P. ^{[1
]}

Martinez, E. ^{[1
]}

Menendez, A. ^{[1
,2
]}

Pedraza, L. ^{[1
]}

Fernandez, J. ^{[1
]}

Fuster, J. ^{[1
]}

Grudiev, A. ^{[3
]}

Lasheras, N. Catalan ^{[3
]}

Wuensch, W. ^{[3
]}

机构：

[1] Univ Valencia, Inst Fis Corpuscular, CSIC, Carrer Catedrat Jose Beltran Martinez 2, Paterna 46980, Valencia, Spain

[2] Univ Valencia, Elect Engn Dept, Avinguda Univ, Burjassot 46100, Valencia, Spain

[3] CERN, Esplanade Particules 1, CH- 1211 Meyrin, Switzerland

来源：

NUCLEAR ENGINEERING AND TECHNOLOGY | 2025年 / 57卷 / 01期

关键词：

High-gradient RF cavities; Linac; Hadron therapy;

D O I：

10.1016/j.net.2024.08.033

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

High-Gradient accelerating cavities are one of the main research lines in the development of compact linear accelerators. However, the operation of such accelerating cavities is currently limited by non-linear electromagnetic effects that are intensified at high electric fields, such as RF breakdowns, dark currents and radiation. A novel normal-conducting High Gradient S-band Backward Travelling Wave accelerating cavity for medical application (v = 0.38c) has been designed and constructed at CERN with a design gradient of 50 MV/m. In this paper, the high-power performance studies of this novel design carried out at the IFIC high-power laboratory are presented, as well as the analysis of the conditioning parameters in combination with numerical simulations.

引用

页数：10

共 50 条

[1] HIGH-POWER S-BAND POWER DIVIDER
TRUE, RM
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1967, MT15 (10) : 584 - &
[2] Silicon carbide MESFET's for high-power S-band applications
Cree Research, Inc, Durham, United States
Materials Science Forum, 1998, 264-268 (pt 2): : 953 - 956
[3] Silicon carbide MESFET's for high-power S-band applications
Allen, ST
Sadler, RA
Alcorn, TS
Sumakeris, J
Glass, RC
Carter, CH
Palmour, JW
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 953 - 956
[4] Silicon carbide MESFET's for high-power S-band applications
Allen, ST
Sadler, RA
Alcorn, TS
Palmour, JW
Carter, CH
1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES, 1997, : 57 - 60
[5] High-gradient testing of an S-band, normal-conducting low phase velocity accelerating structure
Vnuchenko, A.
Esperante Pereira, D.
Gimeno Martinez, B.
Benedetti, S.
Lasheras, N. Catalan
Garlasch, M.
Grudiev, A.
McMonagle, G.
Pitman, S.
SyratchevO, I
Timmins, M.
Wegner, R.
Woolley, B.
Wuensch, W.
Golfe, A. Faus
PHYSICAL REVIEW ACCELERATORS AND BEAMS, 2020, 23 (08)
[6] S-band high-power broadband transmitter
Baturov, Boris B.
Vinogradnyi, Alexander V.
Koshevarov, Gennady A.
Melnikov, Leonid Ya.
Korolyev, Alexander N.
Meleshkevich, Pavel M.
Poognin, Victor I.
IEEE MTT-S International Microwave Symposium Digest, 2000, 1 : 557 - 559
[7] HIGH-POWER S-BAND JUNCTION CIRCULATOR
STERN, RA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 840 - 842
[8] Development of high-power S-band load
Meng, Xiangcong
Shi, Jiaru
Zha, Hao
Gao, Qiang
Liu, Zening
Liu, Jiayang
Jiang, Yuliang
Wang, Ping
Chen, Huaibi
Qiu, Jiaqi
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 927 : 209 - 213
[9] A HIGH-POWER S-BAND BIPOLAR AMPLIFIER
FATHY, A
KALOKITIS, D
MICROWAVE JOURNAL, 1989, 32 (06) : 137 - &
[10] An S-band high-power broadband transmitter
Baturov, BB
Vinogradnyi, AV
Koshevarov, GA
Melnikov, LY
Korolyev, AN
Meleshkevich, PM
Poognin, VI
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 557 - 559

← 1 2 3 4 5 →