Topological Exciton Density Wave in Monolayer WSe2

被引:0
|
作者
Dong, Shan [1 ]
Chen, Yingda [1 ,4 ]
Qu, Hongwei [5 ]
Lou, Wen-Kai [1 ]
Chang, Kai [2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Semicond Phys & Chip Technol, Beijing 100083, Peoples R China
[2] Zhejiang Univ, Ctr Quantum Matter, Sch Phys, Hangzhou 310058, Peoples R China
[3] Zhejiang Univ, Inst Adv Study Phys, Hangzhou 310058, Peoples R China
[4] Taizhou Univ, Sch Mat Sci & Engn, Taizhou 318000, Peoples R China
[5] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
TRANSITION; SEMICONDUCTOR; SEMIMETAL; PHASE;
D O I
10.1103/PhysRevLett.134.066602
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on the first-principles calculations coupled with the Bethe-Salpeter equation, the topological exciton density wave is investigated in two-dimensional monolayer WSe2. We find that the topological excitonic insulator phase can exist in monolayer WSe2, and it is robust against in-plane strain. In this system, the energy minimum of exciton bands is shifted to a finite in-plane momentum, forming a FuldeFerrell-Larkin-Ovchinnikov-like state. Using the Gross-Pitaevskii equations, stripe-patterned exciton density waves with a nonzero velocity emerge in monolayer WSe2. Our findings pave a new way for exploring the interplay between electron correlation and nontrivial topology.
引用
收藏
页数:6
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