Research on heat dissipation of RF microsystem 3D packaging based on gold stud bumps and Au-Sn eutectic welding

被引:0
|
作者
Zhao, Yongzhi [1 ]
Zhang, Lixiang [2 ]
Ji, Naiyi [2 ]
Li, Zhiqiang [2 ]
Wu, Hongjiang [2 ]
Ma, Kaixue [1 ]
机构
[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China
[2] CETC, Res Inst 13, Shijiazhuang, Hebei, Peoples R China
关键词
RF Micro-system; 3D packaging; PA MMIC; Heat dissipation; Junction temperature; HOT;
D O I
10.1109/ICEPT56209.2022.9873357
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As the core component of information receiving and transmitting, RF micro-system is very important for accurate information transmission. It is urgent to reduce the size and cost of the RF system and improve the performance with the trend of electronic equipment miniaturization. However, the heat dissipation of the packaged devices has become an urgent problem to be solved. In this paper, a novel RF microsystem packaging structure that integrates PA MMIC and Si interposer was developed. Three integration schemes including typical structure, thermal solution structure with gold stud bumps and thermal solution structure with Au-Sn welding were developed. The junction temperature of PA MMIC under different duty ratio was measured by IR thermal imagine. The finite element simulation was also performed to calculate the junction temperature. The experimental results prove the accuracy of the simulation. The experimental and simulation results show that the junction temperature of PA MMIC increases with the increase of duty ratio. The thermal solution structure with Au-Sn welding has the best heat dissipation capacity, followed by thermal solution structure with gold stud bumps and typical structure.
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页数:5
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